(Product name)_G2_00_PSPICE_REVX_ENC.OLB G2 model symbol file for PSpice (Product name)_G2_00_PSpice_revX_enc.lib G2 model library file for PSpice (Product name)_G0_00_PSPICE_REVX.OLB G0 model symbol file for PSpice (Product name)_G0_00_PSpice_revX.lib G0 model library file for PSpice If you unpack it, you will find a total of four files in the unpacking folder: library files and symbol files for G0 and G2 model each. If you select the desired model and click here, the zip file with the following name will be downloaded.įor PSpice model: (product name)_PSpice_(registration date).zipįor LTspice models: (product name)_LTspice_(registration date).zip As a voltage-controlled current source, a MOS transistor can be characterized by its transconductance: Ĭompare NMOS Equation to PMOS Equation (Cut-off) (triode) (saturation) Valid for NMOS (saturation) (triode) (Cut-off) Valid for PMOSG0 and G2 models can be downloaded from above linkage destination.
The slope of the electron profile increases. The effective base width (WB) is reduced. Similarity to Early Effect A larger reverse bias voltage leads to a larger BC depletion region. Pronounced Channel Length Modulation in small L Limited VDS Dependence In Saturation As VDS increase, effective L decreases, therefore, ID increases. PMOS in Saturation Region - ++++++++ P+ P+ N+ N P Substrate= 0V Induced holesĭetermine Region of Operation (6.40) Assume that VTHN=0.4 V and VTHP=-0.4 V PMOS in Triode Region - +++++++++ P+ P+ N+ N P Substrate= 0V Induced holes PMOS: Formation of Channel - ++++++++++ P+ P+ N+ N P Substrate= 0V Induced holes PMOS in Cut-Off Mode - P+ P+ N+ N P Substrate= 0V Regions (No Dependence on VDS) No channel Assumption:ĭetermine Region of Operation (6.19) Tricky! Assume that VTHN=0.4 V and VTHP=-0.4 V Drain can no longer affect the drain current! VG-VD is sufficiently large to produce a channel VG-VD is NOT sufficiently large to produce a channel No channel Electrons are swept by E to drain.
Positive charges repel the holes creating a depletion region, a region free of holes. VTH=300mV to 500 mV (OFF) (ON) Free electrons appear at VG=VTH.
tox is made really thin to increase C, therefore, create a strong control of Q by V.Ī Closer Look at the Channel Formulation Need to tie substrate to GND to avoid current through PN diode. Typical Dimensions of MOSFETs These diode must be reversed biased. A conductive path is created If the density of electrons is sufficiently high. Positive charge attract negative charges to the interface between insulator and silicon. V1 can control the resistivity of the channel. Application of CMOS in Digital Circuits Ī Crude Metal Oxide Semiconductor (MOS) Device V2 causes movement of negative charges, thus current.
Introduction to MOS Transistors Section 6.1-6.4 Selected Figures in Chapter 15
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